Coating materials for oxide thin film transistors
US9171961B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Sep 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/111
Abstract
The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a polymer blend including a polymer and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.