Implantation of gaseous chemicals into cavities formed in intermediate dielectrics layers for subsequent thermal diffusion release
US9171966B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2012 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Apr 19, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0127
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.