Semiconductor light emitting device and method of manufacturing the same
US9172000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2011 |
| Grant date | Oct 27, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.