Patent · US Active

Magneto-electronic devices and methods of production

US9172030B2 · kind B2 · utility

2Cited by
3References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 16, 2012
Grant dateOct 27, 2015
Priority date
Expiry dateAug 2, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01F10/3286
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A magneto-electronic device includes a first electrode, a second electrode spaced apart from the first electrode, and an electric-field-controllable magnetic tunnel junction arranged between the first electrode and the second electrode. The electric-field-controllable magnetic tunnel junction includes a first ferromagnetic layer, an insulating layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the insulating layer. The first and second ferromagnetic layers have respective first and second magnetic anisotropies that are alignable substantially parallel to each other in a first state and substantially antiparallel in a second state of the electric-field-controllable magnetic tunnel junction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.