Gate insulator layer for organic electronic devices

US9175123B2 · kind B2 · utility

Assignees

• Merck Patent GmbH · DE
• PROMERUS, LLC · US

Inventors

• David Christoph Mueller · Frankfurt am Main, DE
• Toby Cull · Romsey, GB
• Pawel Miskiewicz · Southampton, GB
• Miguel Carrasco-Orozco · Winchester, GB
• Andrew Bell · Lakewood, US
• Edmund Elce · Lakewood, US
• Larry F. Rhodes · Silver Lake, US
• Kazuyoshi Fujita · Tokyo, JP
• Hendra Ng · Brecksville, US
• Pramod Kandanarachchi · Edmonton, CA
• Steven Smith · Austin, US

Key dates

• Filing date: Sep 1, 2011
• Grant date: Nov 3, 2015
• Expiry date: Nov 24, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/88
• WIPO field: Macromolecular chemistry, polymers
• WIPO sector: Chemistry

Abstract

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.