Oxide sintered body and sputtering target
US9175380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2012 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3293
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2θ=26.5°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.