Patent · US Active

Method for fabricating two dimensional nanostructured tungsten carbide

US9175387B2 · kind B2 · utility

1Cited by
1References
7Claims
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Key dates

Filing dateJan 21, 2013
Grant dateNov 3, 2015
Priority date
Expiry dateMay 21, 2033

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/4488
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.