Suppression of crystal growth instabilities during production of rare-earth oxyorthosilicate crystals
US9175420B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Sep 30, 2010 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Oct 8, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are a method of growing a rare-earth oxyorthosilicate crystal and a crystal grown using the method. A melt is prepared by melting a first substance including at least one rare-earth element and a second substance including at least one element from group 7 of the periodic table. A seed crystal is brought into contact with the surface of the melt and withdrawn to grow the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.