Patent · US Active

Micromachined ultra-miniature piezoresistive pressure sensor and method of fabrication of the same

US9176018B2 · kind B2 · utility

5Cited by
4References
20Claims
0Family size

Inventor

Key dates

Filing dateFeb 22, 2014
Grant dateNov 3, 2015
Priority date
Expiry dateApr 27, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/47
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method of fabrication of one or more ultra-miniature piezoresistive pressure sensors on silicon wafers is provided. The diaphragm of the piezoresistive pressure sensors is formed by fusion bonding. The piezoresistive pressure sensors can be formed by silicon deposition, photolithography and etching processes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.