Method for detecting an etching residue
US9176053B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/061
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The embodiments of the present invention provide a method for detecting an etching residue and relate to the field of display technologies, with the purpose of detecting an etching residue so as to improve product yield. The method comprises: fitting the boundary of a pattern in a position to be detected by film color difference, and positioning the pattern in a position to be detected, thereby acquiring the pattern in a position to be detected; testing an infrared spectrum of the pattern in a position to be detected, and obtaining an infrared spectrogram; determining whether the residue exists according to the infrared spectrogram. The method of the invention may be applicable for the detection of an etching residue during the process of preparing an array substrate or a cell substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.