Pattern inspection method and pattern inspection apparatus
US9176074B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Jan 21, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In accordance with an embodiment, a pattern inspection method includes applying a light to a substrate including an inspection target pattern in a plurality of optical conditions, detecting a reflected light from the substrate to acquire a pattern image for each of the optical conditions, outputting a gray value difference between the pattern image and a reference image for each of the optical conditions, and specifying a position of the defect in a stacking direction of the stacked film from a relation of the obtained gray value difference between the optical conditions. The pattern is formed by a stacked film, the optical conditions includes at least a first optical condition for detection of a defect on a surface of the stacked film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.