Patent · US Active

Probe and method of manufacture for semiconductor wafer characterization

US9176167B1 · kind B1 · utility

9Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 14, 2012
Grant dateNov 3, 2015
Priority date
Expiry dateSep 29, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG09G3/006
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A conductive probe for semiconductor material characterization includes a distal metallic layer of micrometer-size particles, an intermediate layer of conformable conductive elastomer material, and a pin attached to the elastomer layer. The probe is preferably manufactured by filling a recess in a bottom plate with the metallic particles, coupling a top plate thereto with a perforation aligned with the recess, and filling the perforation with uncured conductive elastomer. The pin, preferably spring-loaded, is pressed into the perforation to compress the silicone to its intended probe size. The silicone is then allowed to cure at room temperature or in a heated environment, or both.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.