Substrate with bump structure and manufacturing method thereof
US9177830B1 · kind B1 · utility
4Cited by
0References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Oct 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a substrate with a bump structure, a copper layer is formed on a semiconductor substrate, and a nickel layer is formed on the copper layer. A bump structure is composed of the copper layer and the nickel layer, wherein the hardness of the bump structure after annealing process depends on the thickness of the nickel layer to meet the user's demand. The hardness of the bump structure meets the user's demand prevents a glass substrate from cracking when the substrate with the bump structure is bonded with the glass substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.