Semiconductor device
US9177954B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 3, 2013 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Apr 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/204
Abstract
A semiconductor device has a semiconductor substrate and a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate. A second conductivity type high concentration region is provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region. A first conductivity type high concentration region is provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.