Patent · US Active

Memory device

US9177997B2 · kind B2 · utility

3Cited by

1References

13Claims

0Family size

Assignee

SONY GROUP CORPORATION · JP

Inventors

Gabriele Nelles · Stuttgart, DE
Silvia Rosselli · Stuttgart, DE
Mustafa Sarpasan · Stuttgart, DE
Nikolaus Knorr · Stuttgart, DE

Key dates

Filing date	Nov 8, 2012
Grant date	Nov 3, 2015
Priority date	—
Expiry date	Nov 8, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/73
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Microelectronic device, comprising a substrate, a first electrode arranged above the substrate, a first resistive switch and a resistivity structure coupled with each other, wherein the first resistive switch and the resistivity structure are arranged in a single layer of the device, and a second electrode arranged above the layer that includes the first resistive switch and the resistivity structure, wherein the first resistive switch and the resistivity structure are coupled with the first and the second electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.