High breakdown voltage metal-insulator-metal capacitor
US9178007B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Jul 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A high breakdown voltage metal-insulator-metal capacitor for compound semiconductor integrated circuit comprises a substrate, an isolation layer, a first metal layer, a dielectric layer, an adhesion layer and a second metal layer. The dielectric layer is formed by alternately stacking plural HfO2 layers and plural SiO2 layers. The thickness of each layer of the plural HfO2 layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of the plural HfO2 layers. And the total thickness of the dielectric layer is thicker than 500 Å such that the breakdown voltage of the capacitor is higher than 50 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.