Semiconductor device
US9178051B2 · kind B2 · utility
5Cited by
2References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 20, 2012 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Feb 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device includes an active region on a semiconductor substrate. The active region is defined by a device isolation layer and includes gate-recesses. The semiconductor device further includes gate electrodes in the gate-recesses, a contact recess in the active region between the gate-recesses, a cell pad that covers at least a portion of the active region between the gate-recesses and that fills at least a portion of the contact recess, and a bit line electrically connected to the cell pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.