Semiconductor device
US9178063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Aug 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.