Thin-film semiconductor device and method for manufacturing the same
US9178075B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2012 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Apr 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
Abstract
A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.