Semiconductor diode device
US9178079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes first and second electrodes, and first, second, and third semiconductor regions. The first semiconductor region has a first conductivity type. The first electrode is provided above the first semiconductor region. The second semiconductor region has a second conductivity type and is provided between the first semiconductor region and the first electrode. The third semiconductor region is provided between the first semiconductor region and the first electrode, and has the second conductivity type. The third semiconductor region has an impurity concentration substantially equal to an impurity concentration of the second semiconductor region, and has first and second portions. The first and second portions constitute a concave-convex form on a side of the first semiconductor region of the third semiconductor region. The second electrode is provided above an opposite side of the first semiconductor region from the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.