P-N diode having a controlled heterostructure self-positioned on HgCdTe, for infrared imagers

US9178101B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Mollard · Grenoble, FR
• Nicolas Baier · Biviers, FR
• Johan Rothman · Grenoble, FR

Key dates

• Filing date: Nov 26, 2012
• Grant date: Nov 3, 2015
• Expiry date: Nov 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1237

Abstract

A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.