P-type doping layers for use with light emitting devices
US9178114B2 · kind B2 · utility
2Cited by
95References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Jan 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.