Thermoelectric devices with interface materials and methods of manufacturing the same
US9178128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2012 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Dec 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Thermoelectric devices with interface materials and methods of manufacturing the same are provided. A thermoelectric device can include at least one shunt, at least one thermoelectric element in thermal and electrical communication with the at least one shunt, and at least one interface material between the at least one shunt and the at least one thermoelectric element. The at least one interface material can comprise a plurality of regions comprising a core material with each region separated from one another and surrounded by a shell material. The interface material can be configured to undergo deformation under (i) a normal load between the at least one shunt and the at least one thermoelectric element or (ii) a shear load between the at least one shunt and the at least one thermoelectric element. The deformation can reduce interface stress between the at least one shunt and the at least one thermoelectric element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.