Magnetic layer patterning by ion implantation
US9181618B2 · kind B2 · utility
0Cited by
6References
20Claims
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Key dates
| Filing date | Mar 2, 2015 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Mar 2, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.