Differential temperature sensor and its capacitors in CMOS/BICMOS technology
US9182294B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The sensor is made on a semiconductor substrate covered with an electrically insulating layer. The electrically insulating layer separates a thermocouple from the substrate. It includes a first portion presenting a first value of capacitance per unit area and a second portion presenting a second value of capacitance per unit area, which is lower than the first value. The sensor includes first and second output terminals connected to the thermocouple. The first output terminal includes a first capacitor having a first electrode formed by a first leg made of an electrically conducting material. The second electrode of the capacitor is formed by a part of the substrate facing said first leg and separated from the first electrode by the first portion of the electrically insulating layer. The first leg connects the thermocouple while overlapping the second portion of the electrically insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.