Patent · US Active

Monolithic optoelectronic TWE-component structure for high frequencies and low optical insertion loss

US9182546B2 · kind B2 · utility

17Cited by

5References

6Claims

0Family size

Assignees

Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US
TERAXION INC. · CA

Inventors

Kelvin Prosyk · Luskville, CA
Ronald Kaiser · Berlin, DE
Karl-Otto Velthaus · Kleinmachnow, DE

Key dates

Filing date	Dec 15, 2009
Grant date	Nov 10, 2015
Priority date	—
Expiry date	Dec 15, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG02F1/212
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A monolithic optoelectronic device has a spot-size converter optically connected to a waveguide. The overclad extending over the core of the waveguide is thinner and more highly doped that the overclad of the spot-size converter. This structure can be made by applying a process of selective etching and enhanced regrowth to create selective regions of the overclad of different thickness or doping.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.