Method of programming a non-volatile resistive memory
US9183930B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Feb 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for pre-programming a matrix of resistive non-volatile memory cells, the cells including a dielectric material between two conducting electrodes and being initially in an original resistive state, the dielectric material being electrically modified to bring a cell from the original state to another resistive state wherein the resistance of the cell is at least twice and preferably at least ten times lower than the resistance of the cell in the original state. The method includes, prior to mounting a component containing the matrix on a support, programming the matrix by electrically bringing cells from the original state to the other state, leaving the other cells in their original state, and after mounting the component, applying to all the cells an intermediate voltage, to keep in the original state the cells in this state and returning or keeping to/in another state the cells not in the original state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.