Method for producing an optoelectronic nitride compound semiconductor component

US9184051B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Peter Stauss · Regensburg, DE
• Philipp Drechsel · Regensburg, DE

Key dates

• Filing date: Sep 21, 2012
• Grant date: Nov 10, 2015
• Expiry date: Sep 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.