Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less

US9184057B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Andreas Klipp · Lambsheim, DE
• Guenter Oetter · Bischofswerda, DE
• Sabrina Montero Pancera · Viernheim, DE
• Andrei Honciuc · Iași, RO
• Christian Bittner · Bensheim, DE

Key dates

• Filing date: Feb 29, 2012
• Grant date: Nov 10, 2015
• Expiry date: Feb 29, 2032

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/405
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.