Multi-spectrum photosensitive device
US9184204B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2010 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Apr 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A multi-spectrum photosensitive device comprises two, three, or four composite sensing pixels arranged in layers up and down in a base layer of P-type or N-type silicon by means of single-sided processing or double-sided processing, each composite sensing pixels can sense respectively spectrum orthogonal or complementary to each other in visible light or visible and infrared light. The basic sensing pixels on different layers of the composite sensing pixels can be designed to sense different colors or spectrums, so that a multi-spectrum photosensitive chip can be achieved by repeatedly arranging the macro units consisting of more than one composite sensing pixel. The present disclosure also includes a new multi-layer sensing pixel, and examples of which used in a single-sided double-layer, or a double-sided double-layer, or a double-sided three-layer, or a double-sided four-layer, or a single-sided mixed double-layer, or a double-sided mixed with double-layer or a multi-layer multi-spectrum sensing device. A multi-spectrum photosensitive device according to the present disclosure has the advantage of better color sensing performance, integration of color sensing and infrared sensin…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.