Shift-register like magnetic storage memory and method for driving the same
US9184212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Jul 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic storage element according to an embodiment includes: a magnetic nanowire having a cross-sectional area varying in a first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.