Embedded tungsten resistor

US9184226B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Russell Carlton McMullan · Austin, US
• Binu Kamblath Pushkarakshan · Bengaluru, IN
• Subramanian J. Narayan · Bengaluru, IN
• Swaminathan Sankaran · Allen, US
• Keith E. Kunz · Bryan, US

Key dates

• Filing date: Aug 15, 2012
• Grant date: Nov 10, 2015
• Expiry date: Aug 7, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.