Thin film transistor substrate and display device having the same
US9184253B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
Abstract
A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.