FinFET device and method of forming fin in the same
US9184291B2 · kind B2 · utility
1Cited by
2References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Feb 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
Abstract
A method for manufacturing a fin for a FinFET device includes providing a semiconductor substrate, forming a plurality of implanted regions in the semiconductor substrate, and epitaxially forming fins between two adjacent implanted regions. The method also includes forming an insulating structure between two adjacent fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.