Methods of fabricating semiconductor devices having punch-through stopping regions
US9184293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Aug 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.