Semiconductor device having c-axis aligned portions and doped portions
US9184296B2 · kind B2 · utility
14Cited by
26References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Aug 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.