Multi-source JFET device
US9184304B2 · kind B2 · utility
4Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Jan 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A junction field-effect transistor (JFET) device is provided. The JFET includes a drain region, a source region, and a junction gate region disposed between the drain region and the source region, and the source region includes two or more source terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.