Patent · US Active

Devices having nanoscale structures and methods for making same

US9184308B1 · kind B1 · utility

3Cited by

3References

17Claims

0Family size

Assignee

University of South Florida · US

Inventors

I-Tsang Wu · Tampa, US
Jing Wang · Tianjin, CN

Key dates

Filing date	Sep 20, 2013
Grant date	Nov 10, 2015
Priority date	—
Expiry date	Sep 24, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/00

Abstract

In one embodiment, devices, such as metal-insulator-metal tunneling diodes, are fabricated by forming a cavity in a substrate having a top surface, conformally depositing a thin film of material in the cavity so as to form a thin layer of material on walls of the cavity, and depositing a layer of material to fill the cavity, wherein a top edge of the thin film is exposed and is flush with the top surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.