Pixel-grouping image sensor
US9185319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2012 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Oct 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80373
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to matrix image sensors organized into pixel rows and columns, and more specifically to image sensors produced with active pixels in MOS technology. The matrix is organized into groups of at least two pixels with means for grouping the charges engendered in the two pixels into one pixel, with the aim of improving sensitivity. Provision is made for at least one gate for temporarily storing charges, of dissymmetric form, arranged between the photodiode of the first pixel and the photodiode of the second pixel, and means for applying to the temporary storage gate a succession of potentials that allow prohibition first of all of the passage of charges between the first and second photodiodes during the charge integration period, then collection, under the gate, of the charges accumulated in the photodiodes, then discharge of these charges only into the second photodiode, on account of the dissymmetry of the gate. The charges grouped in this way in a single photodiode are read in the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.