Polyimides as dielectric
US9187600B2 · kind B2 · utility
0Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jun 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/11
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.