Patent · US Active

Polyimides as dielectric

US9187600B2 · kind B2 · utility

0Cited by
6References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 1, 2011
Grant dateNov 17, 2015
Priority date
Expiry dateJun 4, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K50/11
  • WIPO fieldMacromolecular chemistry, polymers
  • WIPO sectorChemistry

Abstract

The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.