Pattern mask and method of manufacturing thin film pattern using pattern mask
US9188851B2 · kind B2 · utility
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1References
14Claims
0Family size
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Oct 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 μm to about 10.8 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.