Nonvolatile memory device and method of operating the same
US9189174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jan 11, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a nonvolatile memory device and a method for operating the nonvolatile memory device. The method for operating the nonvolatile memory device includes generating a first program voltage, applying the generated first program voltage to a first word line to which a first memory cell is connected for performing a first program operation on the first memory cell, determining whether a number of pulses of a pumping clock signal for generating the first program voltage is greater than or equal to a predetermined critical value n (where n is a natural number), and stopping the performing of the first program operation on the first memory cell when the number of pulses of the pumping clock signal is determined to be greater than or equal to the predetermined critical value n.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.