Variable resistance memory device and related method of operation
US9190143B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 4, 2012 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a variable resistance memory device comprises determining a level of an access voltage based on a number of rows or columns of a cell array, and supplying the access voltage having the determined level to the cell array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.