High-K dielectric layer based semiconductor structures and fabrication process thereof

US9190282B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventors

• Aileen Li · Shanghai, CN
• Jinghua Ni · Shanghai, CN

Key dates

• Filing date: Oct 28, 2012
• Grant date: Nov 17, 2015
• Expiry date: May 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.