Replacement metal gate transistor with controlled threshold voltage
US9190409B2 · kind B2 · utility
1Cited by
2References
19Claims
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Key dates
| Filing date | Feb 24, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Feb 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method and structure for a semiconductor device includes a semiconductor substrate and an N-channel transistor and a P-channel transistor provided on the semiconductor substrate. Each of the N-channel transistor and the P-channel transistor has a gate dielectric film on the semiconductor substrate, and a gate electrode is formed on the gate dielectric. The gate electrode comprises a metal conductive layer. The oxygen concentration in the metal conductive layer for the N-channel transistor is different from that for the P-channel transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.