Thin film transistor substrate and manufacturing method thereof
US9190420B2 · kind B2 · utility
4Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Apr 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.