Semiconductor device and manufacturing method of semiconductor device
US9190527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Feb 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly reliable semiconductor device including an oxide semiconductor is provided. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer to a channel formation region, whereby oxygen vacancies which might be generated in the channel formation region are filled. Further, a protective insulating layer containing a small amount of hydrogen and functioning as a barrier layer having a low permeability to oxygen is formed over the gate electrode layer so as to cover side surfaces of an oxide layer and a gate insulating layer that are provided over the oxide semiconductor layer, whereby release of oxygen from the gate insulating layer and/or the oxide layer is prevented and generation of oxygen vacancies in a channel formation region is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.