Semiconductor device and manufacturing method thereof
US9190528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Sep 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.