Light emitting diode and fabrication method thereof
US9190572B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2015 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | May 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A light emitting diode includes: a substrate; a light-emitting epitaxial layer, from bottom to up, laminated by semiconductor material layers of a first confinement layer, a light-emitting layer and a second confinement layer over the substrate; a current blocking layer over partial region of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and is divided into a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with thickness larger than that of the light-emitting region, thus forming a good ohmic contact between this structure and the light-emitting epitaxial layer and reducing light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure, which guarantees current spreading performance and reduces working voltage and light absorption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.