Patent · US Active

Semiconductor light-emitting device with reflective surface region

US9190573B2 · kind B2 · utility

1Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 28, 2012
Grant dateNov 17, 2015
Priority date
Expiry dateAug 28, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0363
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A semiconductor lighting device may include a substrate populated with at least one semiconductor light source, wherein at least one reflective surface region of the substrate is covered with a light-reflecting layer, and wherein the light-reflecting layer has an aluminum carrier coated in a reflection-intensifying manner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.